University of Colorado

Younghee Lee

Steven McClellan George

Nicholas Ray Johnson

Amy Elizabeth Marquardt

David Richard Zywotko

Jaime Willadean Dumont

Aziz Abdulagatov

The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises sequential reactions with a metal precursor and a halogen-containing gas. In other embodiments, the etching rate is increased by removing residual species bound to and/or adsorbed onto the surface.

Enhancement of thermal atomic layer etching

The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises sequential reactions with a metal precursor and a halogen-containing gas. The invention provides a solid substrate obtained according to any of the methods of the invention. The invention further provides a porous substrate obtained according to any of the methods of the invention. The invention further provides a patterned solid substrate obtained according to any of the methods of the invention.

Methods of atomic layer etching (ALE) using sequential, self-limiting thermal reactions

The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises contacting a solid substrate comprising a first metal compound with an oxidant, optionally contacting the solid substrate with a second metal compound, and then contacting the modified solid substrate with a fluorinating agent, whereby ALE of the solid substrate is promoted.

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Boulder, CO, United States of America

Younghee Lee