Youhei Ohno

Title: Youhei Ohno: Innovator in Semiconductor Technology

Introduction

Youhei Ohno is a prominent inventor based in Saitama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the reliability and performance of semiconductor devices.

Latest Patents

One of his latest patents is a semiconductor device and method for manufacturing the semiconductor device. This invention includes a silicon carbide substrate and a protective film that covers at least part of the main surface and one or more side surfaces of the substrate. This design helps to avoid contact between the side surface of the silicon carbide substrate and moisture-gathering materials, thereby enhancing the breakdown behavior and long-term reliability of the semiconductor device. Another notable patent involves a semiconductor device that features a silicon carbide drift layer, a buried silicon carbide layer, and an oxide semiconductor layer. In this configuration, the buried silicon carbide layer is located within the drift layer and is covered by the oxide semiconductor layer, which further improves the breakdown behavior and long-term reliability of the device.

Career Highlights

Youhei Ohno is associated with Sanken Electric Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more reliable and efficient.

Collaborations

He has collaborated with notable coworkers such as Hiroshi Shikauchi and Satoru Washiya, contributing to various projects that enhance semiconductor technology.

Conclusion

Youhei Ohno's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of more reliable semiconductor devices.