Sanken Electric Co., Ltd.

Youhei Ohno

Hiroshi Shikauchi

Tomonori Hotate

Satoru Washiya

Hiromichi Kumakura

Ryohei Baba

A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide substrate and a protective film covering at least partly a main surface of the silicon carbide substrate and one or more side surfaces of the silicon carbide substrate. Therefore, contact of the side surface of the silicon carbide substrate with the moisture gathering material may be avoided, and the breakdown behavior and the long-term reliability of the semiconductor device may be further improved.

Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.

A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

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Saitama, Japan

Youhei Ohno