The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jun. 01, 2017
Applicant:
Sanken Electric Co., Ltd., Saitama, JP;
Inventors:
Hiroshi Shikauchi, Saitama, JP;
Satoru Washiya, Saitama, JP;
Youhei Ohno, Saitama, JP;
Tomonori Hotate, Saitama, JP;
Hiromichi Kumakura, Saitama, JP;
Assignee:
Sanken Electric Co., Ltd., Saitama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/52 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7823 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/66681 (2013.01);
Abstract
A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.