The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Jun. 30, 2017
Applicant:

Sanken Electric Co., Ltd., Saitama, JP;

Inventors:

Hiroshi Shikauchi, Saitama, JP;

Satoru Washiya, Saitama, JP;

Youhei Ohno, Saitama, JP;

Tomonori Hotate, Saitama, JP;

Hiromichi Kumakura, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/16 (2006.01); H01L 21/78 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/56 (2013.01); H01L 21/78 (2013.01); H01L 29/1608 (2013.01);
Abstract

A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide substrate and a protective film covering at least partly a main surface of the silicon carbide substrate and one or more side surfaces of the silicon carbide substrate. Therefore, contact of the side surface of the silicon carbide substrate with the moisture gathering material may be avoided, and the breakdown behavior and the long-term reliability of the semiconductor device may be further improved.


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