Yokohama, Japan

Yoshinori Tsuchiya


Average Co-Inventor Count = 2.7

ph-index = 8

Forward Citations = 156(Granted Patents)

Forward Citations (Not Self Cited) = 142(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Clifton Park, NY (US) (2012)
  • Kanagawa, JP (2010 - 2015)
  • Aichi-ken, JP (2015)
  • Yokohama, JP (2008 - 2019)

Company Filing History:


Years Active: 2008-2019

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58 patents (USPTO):

Title: **Yoshinori Tsuchiya: Innovator in Semiconductor Technology**

Introduction

Yoshinori Tsuchiya, located in Yokohama, Japan, is a prominent inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 58 patents, he continues to push the boundaries of innovation in his area of expertise.

Latest Patents

One of Yoshinori Tsuchiya's latest patents is focused on a semiconductor device that comprises a semiconductor substrate, an nMISFET (n-type Metal-Insulator-Semiconductor Field-Effect Transistor) formed on the substrate, featuring a first dielectric and a first metal gate electrode. The first metal gate electrode is composed of a metal element selected from titanium, zirconium, hafnium, tantalum, scandium, yttrium, and members of the lanthanoid and actinide series, along with boride, silicide, or germanide compounds of these metals. Additionally, the device includes a pMISFET (p-type Metal-Insulator-Semiconductor Field-Effect Transistor) that shares similar components with specific variations in insulating materials. Tsuchiya’s design innovations have laid the groundwork for advancements in semiconductor architectures.

Career Highlights

Throughout his career, Yoshinori Tsuchiya has made significant strides in semiconductor research and development, working for renowned companies such as Kabushiki Kaisha Toshiba and Toshiba Corporation. His work has not only contributed to the growth of these organizations but also to the global advancement of semiconductor technologies.

Collaborations

In his journey, Yoshinori has collaborated with talented individuals such as Masato Koyama and Reika Ichihara. Together, they have combined their expertise, resulting in breakthroughs that propel the industry forward, especially in the design and development of semiconductor devices.

Conclusion

Yoshinori Tsuchiya remains a key figure in the realm of semiconductor innovations. His extensive patents and collaborations exemplify the impact of dedicated inventors in shaping the future of technology. As semiconductor devices continue to evolve, Tsuchiya's work will undoubtedly be recognized as a vital contribution to the field.

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