IDiyas

For the Inventor, By the Inventor

Osaka, Japan

Yoshinori Odake

USPTO Granted Patents = 11

Average Co-Inventor Count = 2.3

ph-index = 8

Forward Citations = 201(Granted Patents)


Location History:

  • Katano, JP (1996)
  • Osaka, JP (1994 - 2003)
  • Hirakata, JP (2005)
  • Kyoto, JP (2006)

Company Filing History:

goldMedal9 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
silverMedal2 out of 655 
 
Matsushita Electronics Corporation
 patents

Years Active: 1994-2006

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11 patents (USPTO):Explore Patents
1. 7129135 - Nonvolatile semiconductor memory device and method for fabricating the same (2006-10-31),
2. 6872624 - Method of fabricating nonvolatile semiconductor memory device (2005-03-29),
3. 6538937 - Nonvolatile semiconductor memory test circuit and method, nonvolatile semiconductor memory and method for fabricating nonvolatile semiconductor memory (2003-03-25),
4. 6274901 - Nonvolatile semiconductor memory device and method for fabricating the same (2001-08-14),
5. 6165825 - Semiconductor device and method for producing the same (2000-12-26),
6. 6030869 - Method for fabricating nonvolatile semiconductor memory device (2000-02-29),
7. 5715196 - Method for driving a non-volatile semiconductor memory (1998-02-03),
8. 5627779 - Non-volatile semiconductor memory having an array of non-volatile memory (1997-05-06),
9. 5510639 - Non-volatile semiconductor memory having a ring-shaped floating gate (1996-04-23),
10. 5500379 - Method of manufacturing semiconductor device (1996-03-19),
11. 5359554 - Semiconductor memory device having an energy gap for high speed operation (1994-10-25),
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