Yoshikazu Sasaki

Title: Innovations of Yoshikazu Sasaki

Introduction

Yoshikazu Sasaki is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative spirit and technical expertise.

Latest Patents

Sasaki's latest patents include a method of making semiconductor ferroelectric memory elements and a semiconductor ferroelectric memory transistor. The first patent describes a FeFET that features a ferroelectric film thickness ranging from 59 nm to 150 nm. This design maintains a data retention property of not less than 10 seconds and a data rewrite endurance property of at least 10 times. Additionally, the FeFET allows for a memory window of 0.40 V or more when the gate voltage sweep amplitude does not exceed 3.3 V. His second patent focuses on a semiconductor memory element that includes a laminated structure, where a memory member and a conductor are superposed on a semiconductor substrate. This innovative design ensures that the memory member's bottom surface width does not exceed 100 nm, enhancing the overall performance of the semiconductor memory element.

Career Highlights

Throughout his career, Yoshikazu Sasaki has worked with notable organizations, including the National Institute of Advanced Industrial Science and Technology and Wacom R&D Corporation. His work in these institutions has allowed him to develop cutting-edge technologies that have advanced the field of semiconductor memory.

Collaborations

Sasaki has collaborated with esteemed colleagues such as Mitsue Takahashi and Shigeki Sakai. Their combined expertise has contributed to the successful development of innovative semiconductor technologies.

Conclusion

Yoshikazu Sasaki's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in memory technology and semiconductor applications.