National Institute of Advanced Industrial Science and Technology

Wacom R&d Corporation

Jeol Ltd.

Wacom Corporation Limited

Yoshikazu Sasaki

Masaru Umeda

Masayuki Toda

Shigeki Sakai

Masaki Kusuhara

Mitsue Takahashi

Tomohisa Fukuda

Tatsuhito Kimura

Tomohiro Mihira

Misumi Kadoi

Norimasa Sakuta

A holder includes a first sub holder configured to hold a primary specimen, and a second sub holder configured to hold a support member. The primary specimen is processed in a first state where the holder is disposed within a first specimen processing apparatus. Subsequently, in a second state where the holder is disposed within a second specimen processing apparatus, a secondary specimen is prepared from the primary specimen, the secondary specimen is moved onto the support member, and a thin film specimen is prepared from the secondary specimen.

Specimen processing holder and specimen processing method

A FeFET and a method of its manufacture are provided, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm&#x3c;dr&#x3c;150 nm, without impairing the data retention property of not less than 10seconds and the data rewrite endurance property of not less than 10times, of those that have hitherto been developed, and the FeFET allowing a memory window of 0.40 V or more when a sweep amplitude of the gate voltage is not more than 3.3 V.

Method of making semiconductor ferroelectric memory element, and semiconductor ferroelectric memory transistor

A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.

Semiconductor memory element, other elements, and their production methods

[Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm&#x3c;dr&#x3c;150, without impairing the data retention property of not less than 10seconds and the data rewrite withstand property of not less than 10times, of those that have hitherto been developed, and the FeFET allowing data to be written with a writing voltage whose absolute value is not more than 3.3 volts. [Means for Solving] In methods of making a device in which an insulator, a film made of constituent elements of a bismuth layered perovskite crystalline ferroelectric and a metal are sequentially formed in the indicated order on a semiconductor substrate and thereafter are annealed for ferroelectric crystallization, thereby preparing the device composed of the semiconductor, insulator, ferroelectric and metal, a method of making a semiconductor ferroelectric memory element in which the film is composed of Ca. Sr, Bi, Ta and oxygen atoms, the metal is Ir or Pt or an alloy of Ir and Pt, or Ru, and the annealing for ferroelectric crystallization is performed in a mixed gas having oxygen added to nitrogen or a mixed gas having oxygen added to argon.

Growing community of inventors

Tokyo, Japan

Yoshikazu Sasaki