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For the Inventor, By the Inventor

Hamura, Japan

Yoshikazu Saitoh

This inventor holds 24 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Renesas Technology Corp., Hitachi Ulsi Systems Co., Ltd., Renesas Electronics Corporation. Active years: 2003-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshikazu Saitoh. Retrieved from https://idiyas.com/inventor/yoshikazu-saitoh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24

% Patents Active = 54.2

Average Co-Inventor Count = 2.9

ph-index = 7

Forward Citations = 116(Granted Patents)


Company Filing History:

goldMedal13 out of 3,781 
 
Renesas Technology Corp.
 patents
silverMedal9 out of 336 
 
Hitachi Ulsi Systems Co., Ltd.
 patents
bronzeMedal7 out of 7,654 
 
Renesas Electronics Corporation
 patents
4. 3 out of 217 
 
Hitachi Device Engineering Co., Ltd.
 patents
5. 1 out of 42,731 
 
Hitachi, Ltd.
 patents
6. 3 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2003-2016

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Areas of Expertise:
Leakage Current
Integrated Circuit
Step-Down Circuit
Memory Device
Voltage Stabilization
Semiconductor Wafer
Chip Manufacturing
Variable Logic Circuit
24 patents (USPTO):Explore Patents
1. 9530485 - Semiconductor integrated circuit device with reduced leakage current (2016-12-27),
2. 9111636 - Semiconductor integrated circuit device with reduced leakage current (2015-08-18),
3. 8797791 - Semiconductor integrated circuit device with reduced leakage current (2014-08-05),
4. 8437179 - Semiconductor integrated circuit device with reduced leakage current (2013-05-07),
5. 8232589 - Semiconductor integrated circuit device with reduced leakage current (2012-07-31),
6. 8125017 - Semiconductor integrated circuit device with reduced leakage current (2012-02-28),
7. 7964484 - Semiconductor integrated circuit device with reduced leakage current (2011-06-21),
8. 7569881 - Semiconductor integrated circuit device with reduced leakage current (2009-08-04),
9. 7436247 - Step-down circuit with stabilized output voltage (2008-10-14),
10. 7388238 - Semiconductor integrated circuit device with reduced leakage current (2008-06-17),
11. 7208999 - Step-down circuit with stabilized output voltage (2007-04-24),
12. 7203116 - Semiconductor memory device (2007-04-10),
13. 7087942 - Semiconductor integrated circuit device with reduced leakage current (2006-08-08),
14. 7082063 - Semiconductor memory device (2006-07-25),
15. 6998674 - Semiconductor integrated circuit device with reduced leakage current (2006-02-14),

Title: Yoshikazu Saitoh: Pioneering Inventor from Hamura, JP

Introduction: Yoshikazu Saitoh is a renowned inventor hailing from Hamura, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yoshikazu Saitoh holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Saitoh has worked with leading tech companies in Japan, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Yoshikazu Saitoh has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Yoshikazu Saitoh's relentless pursuit of innovation and his passion for creating solutions to complex challenges have solidified his position as a trailblazer in the world of technology, inspiring future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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