The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Jan. 17, 2012
Kenichi Osada, Kawasaki, JP;
Koichiro Ishibashi, Warabi, JP;
Yoshikazu Saitoh, Hamura, JP;
Akio Nishida, Tachikawa, JP;
Masaru Nakamichi, Hitachinaka, JP;
Naoki Kitai, Fussa, JP;
Kenichi Osada, Kawasaki, JP;
Koichiro Ishibashi, Warabi, JP;
Yoshikazu Saitoh, Hamura, JP;
Akio Nishida, Tachikawa, JP;
Masaru Nakamichi, Hitachinaka, JP;
Naoki Kitai, Fussa, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.