Tokyo, Japan

Yoshikazu Nishimura

This inventor holds 11 USPTO granted patents. Top assignees: Nec Corporation, Nec Compound Semiconductor Devices, Ltd.. Active years: 2000-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshikazu Nishimura. Retrieved from https://idiyas.com/inventor/yoshikazu-nishimura-ue2mwiul

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 81.8

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 121(Granted Patents)


Location History:

  • Tokyo, JP (2000 - 2003)
  • Kawasaki, JP (2004)

Company Filing History:


Years Active: 2000-2004

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11 patents (USPTO):Explore Patents

Title: **Yoshikazu Nishimura: Innovator in High-Frequency Circuit Technology**

Introduction

Yoshikazu Nishimura, based in Tokyo, Japan, is a prominent inventor with a remarkable portfolio of 11 patents to his name. His innovative work primarily focuses on advancing high-frequency circuit technology and active bias circuits, showcasing his contributions to the field of electrical engineering.

Latest Patents

Nishimura's latest patents highlight his expertise and inventive capabilities. One of his significant inventions is a **High-Frequency Circuit** that features a bias circuit designed to control the gains of transistors based on an input gain control voltage. This circuit integrates a band-switching functionality, which includes two cascode-connected transistors. The downstream transistor's gate is directly connected to the gain control voltage terminal, ensuring precise operational efficiency. Furthermore, his invention also incorporates a bias circuit with multiple transistors, optimizing the gain and functionality across various applications.

Another noteworthy patent is the **Active Bias Circuit Having Wilson and Widlar Configurations**. This innovative circuit allows for the output bias voltage to be maintained at approximately zero volts, despite variations in the reference voltage used to generate the current. It employs a clever design that includes cascode-connected transistors and a strategically placed resistor, ultimately decreasing the output bias voltage compared to configurations lacking this component.

Career Highlights

Throughout his career, Yoshikazu Nishimura has made significant strides in the field while working with renowned companies such as NEC Corporation and NEC Compound Semiconductor Devices, Ltd. His contributions have played a crucial role in advancing technologies that support high-frequency operations in various electronic devices.

Collaborations

Nishimura's inventive journey has seen him collaborate with talented professionals like Seiji Ichikawa and Takeshi Umemoto. These partnerships have fostered shared knowledge and innovation, further enhancing the development of groundbreaking technologies in circuit design.

Conclusion

Yoshikazu Nishimura stands out as a significant figure in the realm of electrical engineering innovation. His robust patent portfolio reflects his dedication to enhancing circuit functionality and efficiency. As he continues to develop pioneering technologies, Nishimura undoubtedly paves the way for future advancements in high-frequency circuit applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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