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Yoshikazu Kasuya

This inventor holds 30 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Seiko Epson Corporation. Active years: 2002-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshikazu Kasuya. Retrieved from https://idiyas.com/inventor/yoshikazu-kasuya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30

% Patents Active = 23.3

Average Co-Inventor Count = 1.7

ph-index = 9

Forward Citations = 170(Granted Patents)

Location History:

Sukato, JP (2002)
Sakutu, JP (2003 - 2004)
Sakuta, JP (2004)
Suwa, JP (2007)
Sakata, JP (2002 - 2021)

Company Filing History:

30 out of 34,268

Seiko Epson Corporation

Years Active: 2002-2021

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Areas of Expertise:

Semiconductor Device

Manufacturing Method

Mask Data Generation

Dummy Wiring Layers

Surface Acoustic Wave Element

Interdigital Transducer

MONOS Memory Device

Wiring Line Structures

Gate-Gate Layers

Drain-Drain Layers

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10930635 - Semiconductor device (2021-02-23),

2. 10679979 - Semiconductor device (2020-06-09),

3. 10121741 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2018-11-06),

4. 9978737 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2018-05-22),

5. 9953922 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2018-04-24),

6. 9455223 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2016-09-27),

7. 8984466 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2015-03-17),

8. 8637950 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2014-01-28),

9. 8418114 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2013-04-09),

10. 8214776 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2012-07-03),

11. 7977233 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2011-07-12),

12. 7802224 - Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium (2010-09-21),

13. 7484280 - Method for manufacturing a surface acoustic wave element having an interdigital transducer (IDT) electrode (2009-02-03),

14. 7271490 - Semiconductor device having dummy wiring layers and a method for manufacturing the same (2007-09-18),

15. 7015542 - MONOS memory device (2006-03-21),

Title: Yoshikazu Kasuya - Pioneering Inventor from Sakata, JP

Introduction: Yoshikazu Kasuya is a renowned inventor hailing from Sakata, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yoshikazu Kasuya holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Kasuya has worked with leading tech companies in Japan, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Yoshikazu Kasuya has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge-sharing.

Conclusion: Yoshikazu Kasuya's passion for innovation and his relentless drive to push the boundaries of what is possible make him a true trailblazer in the world of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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