The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Oct. 22, 2003
Yoshikazu Kasuya, Sakata, JP;
Yoshikazu Kasuya, Sakata, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A semiconductor device having a memory region in which a memory cell array is formed of non-volatile memory devices arranged in a matrix of plurality of rows and columns. Each of the non-volatile memory devices has: a word gate formed above a semiconductor layer with a gate insulating layer interposed; an impurity layer formed in the semiconductor layer to form a source region or a drain region; and sidewall-shaped control gates formed along both side surface of the word gate. Each of the control gates consists of a first control gate and a second control gate adjacent to each other. The first control gate and the second control gate are respectively formed on insulating layers having different thickness.