Fukuyama, Japan

Yoshiji Takamura

This inventor holds 4 USPTO granted patents. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 1998-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiji Takamura. Retrieved from https://idiyas.com/inventor/yoshiji-takamura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 1.5

ph-index = 4

Forward Citations = 66(Granted Patents)


Location History:

  • Uda-gun, JP (1998 - 2003)
  • Hiroshima, JP (2005)
  • Fukuyama, JP (2009)

Company Filing History:


Years Active: 1998-2009

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4 patents (USPTO):Explore Patents

Title: Innovations by Yoshiji Takamura

Introduction

Yoshiji Takamura is a notable inventor based in Fukuyama, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of transistors. With a total of 4 patents to his name, Takamura's work has had a profound impact on the efficiency and reliability of electronic devices.

Latest Patents

Takamura's latest patents include innovative designs for transistors that enhance performance and manufacturing processes. One of his patents focuses on a transistor and its manufacturing method. This invention addresses the boundary between the gate oxide formed on a silicon substrate and a device isolation film. By adjusting the thickness of the gate electrode and optimizing the relationships between various dimensions, the transistor can avoid issues such as the inverse narrow channel effect and kink characteristics. This makes it suitable for the scale-down of large-scale integrated circuits (LSIs) while reducing manufacturing steps.

Another significant patent is for a low voltage/high voltage transistor. This semiconductor device incorporates both high-voltage and low-voltage transistors on a single substrate. The reliability of the high-voltage transistor is improved through a specific implantation process that protects the substrate and gate electrode. This results in a high-voltage transistor with a deeper LDD region junction depth compared to the low-voltage transistor, ensuring enhanced reliability and performance.

Career Highlights

Yoshiji Takamura is currently associated with Sharp Kabushiki Kaisha Corporation, where he continues to innovate in the semiconductor field. His work has been instrumental in advancing the technology used in various electronic devices.

Collaborations

Takamura has collaborated with notable colleagues such as Akio Kawamura and Katsuji Iguchi. Their combined expertise has contributed to the successful development of advanced semiconductor technologies.

Conclusion

Yoshiji Takamura's contributions to transistor technology exemplify the importance of innovation in the semiconductor industry. His patents not only enhance device performance but also streamline manufacturing processes. Through his work at Sharp Kabushiki Kaisha Corporation, Takamura continues to influence the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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