The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2005
Filed:
Aug. 08, 2002
Applicant:
Yoshiji Takamura, Hiroshima, JP;
Inventor:
Yoshiji Takamura, Hiroshima, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/76 ; H01L029/94 ; H01L031/062 ; H01L031/113 ; H01L031/119 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device has at least one high-voltage and low-voltage transistor on a single substrate. The reliability of the high-voltage transistor is enhanced by performing a LDD implantation in only the high-voltage transistor prior to conducting an oxidation process to protect the substrate and gate electrode. After the oxidation process is performed, the low-voltage transistor is subjected to an LDD implantation process. The resultant semiconductor device provides a high-voltage transistor having a deeper LDD region junction depth than the low-voltage transistor, ensuring reliability and performance.