The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1998
Filed:
Jun. 09, 1997
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of manufacturing a semiconductor device comprises; forming a device isolation region in a semiconductor substrate; forming at least a first conductivity type impurity region in the semiconductor substrate; and forming on the semiconductor substrate a transistor including a gate insulating film, a gate electrode, source/drain regions and a channel located directly under the gate electrode, wherein the first conductivity type impurity region is formed by the steps of: an ion implantation 1 having a concentration peak at a location deeper than the bottom of the device isolation region; an ion implantation 2 having a concentration peak at a location around the bottom of the device isolation region; an ion implantation 3 having a concentration peak around the junction regions where the source/drain regions are to be formed; and an ion implantation 4 having a concentration peak on the surface or directly under the surface of the region where the channel is to be formed.