Yoshihiro Ogata is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work has been instrumental in advancing the capabilities of dynamic RAM and semiconductor memory devices.

Latest Patents

Ogata's latest patents include a trench-type semiconductor memory device, which features a unique design where a groove is formed on the main surface of a semiconductor substrate. This design allows for a highly concentrated semiconductor layer to be created within the groove, facilitating the formation of a capacitor and a transfer gate. Another notable patent is a method of forming a trench-type semiconductor memory device, which simplifies the manufacturing process by allowing for the use of an electroconductive film and a side contact configuration that maintains electrical conduction even in the event of breakage.

Career Highlights

Yoshihiro Ogata is currently employed at Texas Instruments Corporation, where he continues to innovate and develop new technologies in the semiconductor industry. His expertise and dedication have made him a valuable asset to the company and the field at large.

Collaborations

Throughout his career, Ogata has collaborated with talented individuals such as Takayuki Niuya and Toshiyuki Nagata. These collaborations have fostered an environment of creativity and innovation, leading to the development of groundbreaking technologies.

Conclusion

Yoshihiro Ogata's contributions to semiconductor technology are noteworthy and impactful. His innovative patents and collaborations highlight his commitment to advancing the field. His work continues to influence the future of semiconductor devices and memory technology.

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