The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1996
Filed:
May. 26, 1995
Osaomi Enomoto, Ibaraki, JP;
Yoichi Miyai, Ibaraki, JP;
Yoshihiro Ogata, Ibaraki, JP;
Yoshinobu Yoneoka, Abiko, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A process is disclosed herein for increasing yield in a semiconductor circuity having redundant circuitry for replacing defective normal circuitry in the semiconductor integrated circuit. In the first step, an insufficient sinter operation (50) is carried out in a hydrogen atmosphere at a temperature of less than 350.degree. C. At this temperature, no significant change will be seen in the interface trap density. Thereafter, the integrated circuit is tested (54,56) and the defective normal circuitry then is replaced (58) with the redundant circuitry. The integrated circuit is then subjected to a sufficient sinter operation (64) which is an operation wherein the substrate is disposed at a temperature between 350.degree. C.-500.degree. C. for more than 30 minutes. This sufficient sinter operation is performed in a hydrogen atmosphere, allowing dangling bonds at the interface to be terminated with hydrogen. Preferable, the optimal temperature for the sufficient sinter is approximately 400.degree. C. The integrated circuit is then subjected to a reliability and burn-in procedure.