The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 1994
Filed:
May. 27, 1992
Toshiyuki Nagata, Tsukuba, JP;
Hiroyuki Yoshida, Ryngasaki, JP;
Takayuki Niuya, Tsukuba, JP;
Yoshihiro Ogata, Tsuchiura, JP;
Katsushi Boku, Tsuchiura, JP;
Yoichi Miyai, Toride, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A semiconductor device in which a trench-shaped groove (20) and a depression (100), which is formed by removing at least part of the area above and adjacent to the groove, are formed to be continuous on one side of the semiconductor substrate, in which aforementioned groove and aforementioned depression is buried a polysilicon conductive layer (103), the top of which conductive layer is converted into an insulator (102), the bottom of which insulating film (102) is contained in the depression (100). It is possible to form the element areas according to designs, and it is also possible to flatten the surface without wire cutting in the conductive layer.