For the Inventor, By the Inventor

Enter inventor name

Yokkaichi, Japan

Yoshiaki Himeno

USPTO Granted Patents = 12 (Patent Applications = 2)

Average Co-Inventor Count = 2.6

ph-index = 7

Forward Citations = 127(Granted Patents)

Location History:

Yokkaichi, JP (2004 - 2013)
Mie-ken, JP (2004 - 2017)

Company Filing History:

12 out of 52,711

Kabushiki Kaisha Toshiba

Years Active: 2004-2017

Loading Chart...

12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9589974 - Nonvolatile semiconductor memory device and method for manufacturing same (2017-03-07),

2. 8592978 - Method of fabricating semiconductor device and the semiconductor device (2013-11-26),

3. 7582928 - Nonvolatile semiconductor memory device and its manufacturing method (2009-09-01),

4. 7488646 - Nonvolatile semiconductor memory device and its manufacturing method (2009-02-10),

5. 7382015 - Semiconductor device including an element isolation portion having a recess (2008-06-03),

6. 7166889 - Semiconductor memory device having a gate electrode and a method of manufacturing thereof (2007-01-23),

7. 6987047 - Method of manufacturing a nonvolatile semiconductor memory device having a stacked gate structure (2006-01-17),

8. 6974746 - Method of manufacturing a nonvolatile semiconductor memory device having a stacked gate structure (2005-12-13),

9. 6953962 - Nonvolatile memory device having a gate electrode (2005-10-11),

10. 6869845 - Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereof (2005-03-22),

11. 6770932 - Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereof (2004-08-03),

12. 6720610 - Nonvolatile semiconductor memory device and its manufacturing method (2004-04-13),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…