The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jan. 24, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes: an interlayer insulating film; an element separating region separating a semiconductor layer in the memory cell region; a gate electrode provided on one of plurality of semiconductor regions in the memory cell region; a contact electrode having a sidewall in contact with the interlayer insulating film and electrically connected to the one of the plurality of semiconductor regions in the memory cell region; a first wiring layer connected to an upper end of the contact electrode in the memory cell region; and a second wiring layer in a third direction, having an upper end higher than the upper end of the contact electrode, having a lower end lower than the upper end of the contact electrode, and having a sidewall at least partly in contact with the interlayer insulating film in the peripheral region.