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For the Inventor, By the Inventor

Plano, TX, United States of America

Yongxi Zhang

USPTO Granted Patents = 18 

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 13(Granted Patents)


Company Filing History:

goldMedal18 out of 29,232 
 
Texas Instruments Corporation
 patents

Years Active: 2013-2021

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18 patents (USPTO):
1. 10937905 - Transistor having double isolation with one floating isolation (2021-03-02),
2. 10601422 - Integrated high-side driver for P-N bimodal power device (2020-03-24),
3. 10319809 - Structures to avoid floating resurf layer in high voltage lateral devices (2019-06-11),
4. 10304719 - Deep trench isolation with tank contact grounding (2019-05-28),
5. 10121891 - P-N bimodal transistors (2018-11-06),
6. 9985028 - Diluted drift layer with variable stripe widths for power transistors (2018-05-29),
7. 9876071 - Structures to avoid floating RESURF layer in high voltage lateral devices (2018-01-23),
8. 9843322 - Integrated high-side driver for P-N bimodal power device (2017-12-12),
9. 9806074 - High voltage multiple channel LDMOS (2017-10-31),
10. 9735265 - Reduced area power devices using deep trench isolation (2017-08-15),
11. 9653577 - Diluted drift layer with variable stripe widths for power transistors (2017-05-16),
12. 9553011 - Deep trench isolation with tank contact grounding (2017-01-24),
13. 9543299 - P-N bimodal conduction resurf LDMOS (2017-01-10),
14. 9525060 - Reduced area power devices using deep trench isolation (2016-12-20),
15. 9431480 - Diluted drift layer with variable stripe widths for power transistors (2016-08-30),

Title: The Remarkable Innovations of Yongxi Zhang

Introduction

Yongxi Zhang is a distinguished inventor based in Plano, TX, renowned for her significant contributions to the field of semiconductor technology. With an impressive portfolio of 18 patents, she has established herself as a pioneer in developing advanced electronic devices.

Latest Patents

Among the latest innovations attributed to Yongxi Zhang are several groundbreaking patents. One of her notable inventions is a transistor that features double isolation with one floating isolation. This innovative semiconductor device comprises a first transistor, which includes a second level metal layer positioned above a first level metal layer. This configuration integrates a gate stack between the source and drain regions, enhancing the performance and efficiency of the transistor.

Another cutting-edge invention by Yongxi is an integrated high-side driver designed for a P-N bimodal power device. This integrated circuit chip employs a bimodal power N-P Laterally Diffused Metal Oxide Semiconductor (LDMOS) device, which optimally manages input signals and control signals. This development showcases her commitment to advancing the efficiency and functionality of modern power devices.

Career Highlights

Yongxi Zhang's remarkable career is closely associated with her role at Texas Instruments Corporation. Her work at this leading technology company has allowed her to explore and develop semiconductor solutions, contributing to the industry's growth and advancement. Her dedication to innovation and excellence has earned her a reputation as a leading expert in her field.

Collaborations

Throughout her career, Yongxi has collaborated with esteemed colleagues, including Sameer P Pendharkar and Seetharaman Sridhar. These collaborations reflect her ability to work effectively as part of a team, fostering an environment of innovation and creativity.

Conclusion

Yongxi Zhang's contributions to the semiconductor industry are significant and impactful. With her extensive patent portfolio and dedicated work at Texas Instruments Corporation, she continues to push the boundaries of technology. Her inventions are not just advancements in electronic devices but catalysts for future innovations in the field.

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