Yonghui Yang

Title: Yonghui Yang: Innovator in Power Semiconductor Technology

Introduction

Yonghui Yang is a prominent inventor based in Chongqing, China. He has made significant contributions to the field of power semiconductor devices, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor technologies.

Latest Patents

Yonghui Yang's latest patents include innovative designs and manufacturing methods for power semiconductor devices. One of his notable inventions is a power semiconductor device that features a plurality of second resistive field plate structures. These structures are arranged in a termination region of the epitaxial layer, optimizing the electric field distribution and improving the device's withstand voltage performance. Another significant patent is for a MOS device with a resistive field plate, which allows for conductance modulation in the drift region. This invention utilizes modern processing technology to achieve miniaturization and high-density design, aligning with the evolving demands of integrated semiconductor devices.

Career Highlights

Throughout his career, Yonghui Yang has worked at the No. 24 Research Institute of China Electronics Technology Group Corporation. His expertise in semiconductor technology has positioned him as a key figure in the industry, contributing to advancements that support the development of modern electronic devices.

Collaborations

Yonghui has collaborated with notable colleagues, including Kaizhou Tan and Zhaohuan Tang. Their joint efforts have furthered research and innovation in the semiconductor field.

Conclusion

Yonghui Yang's contributions to power semiconductor technology demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of the complexities of semiconductor design, paving the way for future advancements in the industry.