Location History:
- Busan, KR (1989 - 1991)
- Kyunggi, KR (1992)
Company Filing History:
Years Active: 1989-1992
Title: Yong-bo Park: Innovator in Semiconductor Technology
Introduction
Yong-bo Park is a prominent inventor based in Busan, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and efficiency of semiconductor memory devices.
Latest Patents
One of his latest patents is titled "Write Driver Having a Precharging Means." This invention discloses a write driver for a semiconductor memory device that includes a data input for buffering both noninverted and inverted data signals. It features a pulse generator that creates control pulse signals in response to data signal transitions. The write driver precharges data lines after writing data to improve operating speed and reduce noise during subsequent read operations.
Another notable patent is the "Data Output Buffer Circuit for a SRAM." This circuit is designed for SRAMs and includes a drive output node for providing output data. It incorporates multiple circuits that enhance response time and eliminate noise without requiring an external pulse output signal. This innovation allows for smoother transitions between output states, improving overall performance.
Career Highlights
Yong-bo Park has worked with leading companies in the semiconductor industry, including Samsung Electronics Co., Ltd. and Samsung Semiconductor Inc. His experience in these organizations has allowed him to develop cutting-edge technologies that have a lasting impact on the industry.
Collaborations
He has collaborated with notable coworkers such as Byeong-Yun Kim and Tae-Sung Jung. Their combined expertise has contributed to the advancement of semiconductor technologies.
Conclusion
Yong-bo Park is a distinguished inventor whose work in semiconductor technology has led to several important patents. His innovations continue to influence the field, showcasing his commitment to enhancing memory device performance.