This inventor holds 5 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2002-2013.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Tokyo, JP (2002 - 2013)
- Nerima-Ku, JP (2013)
Company Filing History:
Years Active: 2002-2013
Title: Innovations of Yohichi Okumura
Introduction
Yohichi Okumura is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on enhancing the functionality and efficiency of semiconductor devices.
Latest Patents
One of Okumura's latest patents is for a photodiode semiconductor device and manufacturing method. This invention provides a semiconductor device manufactured with multiple photodiodes, ensuring that it does not short circuit and includes an opening without leakage. The design features a second semiconductor layer of a second conductivity type formed on a main surface of a first semiconductor layer of the first conductivity type. Element-separating regions are created on the second semiconductor layer to divide the device into regions of photodiodes. Additionally, a conductive layer is formed in a divided pattern that connects to the second semiconductor layer along the outer periphery of all photodiodes. An insulation layer covers the conductive layer, with an opening reaching the second semiconductor layer in the region inside the conductive layer's pattern.
Another notable patent is for a depletion mode field effect transistor designed for ESD protection. This field effect transistor has a reduced drain capacitance per unit gate width. The gate electrode, which has multiple sides, is formed in a first-conductivity first semiconductor region. The drain region is located inside the gate electrode, while source regions are formed outside the plurality of sides without reducing the corresponding channel widths of the drain region. The gate electrode is designed to encompass all sides of the drain region, effectively forming a transistor.
Career Highlights
Yohichi Okumura is currently employed at Texas Instruments Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the technology used in various electronic devices.
Collaborations
Okumura has collaborated with notable coworkers, including Hiroyuki Tomomatsu and Josef Muenz. Their combined expertise has contributed to the successful development of advanced semiconductor technologies.
Conclusion
Yohichi Okumura's contributions to semiconductor technology through his innovative patents have significantly impacted the industry. His work continues to pave the way for advancements in electronic devices and systems.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
