The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Mar. 29, 2006
Yohichi Okumura, Tokyo, JP;
Hiroyuki Tomomatsu, Oita, JP;
Yohichi Okumura, Tokyo, JP;
Hiroyuki Tomomatsu, Oita, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The object of the invention is to provide a semiconductor device that can form photodiodes that do not short circuit, without damage that causes leakage, despite formation of the opening part, and its manufacturing method. The second semiconductor layer () of the second conductivity type is formed on the main surface of the first semiconductor layer () of the first conductivity type. Element-separating regions () formed at least on the second semiconductor layer separate the device into the regions of plural photodiodes (PD-PD). Conductive layeris formed on the second semiconductor layerin a pattern that is divided for each of the photodiodes and is connected to the second semiconductor layeralong the outer periphery with respect to all of the plural photodiodes. Insulation layer () is formed on the entire surface to cover conductive layer. An opening part, which reaches the second semiconductor layer, is formed in the insulation layer () in the region inside the pattern of conductive layer