The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Oct. 14, 2011
Yohichi Okumura, Nerima-Ku, JP;
Josef Muenz, Munich, DE;
Yohichi Okumura, Nerima-Ku, JP;
Josef Muenz, Munich, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A field effect transistor is provided having a reduced drain capacitance per unit gate width. A gate electrode(G) having a plurality of sides is formed in first-conductivity first semiconductor region. Drain regionD (D) is formed inside the gate electrode, and source regionsS (S) are formed in respective regions outside the plurality of sides in widths that do not reduce the corresponding channel widths of the drain region. The gate electrode is formed along all the plurality of sides of the drain region in order to form a transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile