Odawara, Japan

Yo Sato

This inventor holds 39 USPTO granted patents and 5 published patent applications, primarily in Magnetic Storage Technology. Top assignees: Hgst Netherlands, B.v., Hitachi, Ltd., Sony Semiconductor Solutions Corporation. Active years: 2010-2025.

USPTO Granted Patents = 39 

% Patents Active = 64.1

Average Co-Inventor Count = 4.1

ph-index = 11

Forward Citations = 349(Granted Patents)


Location History:

  • Tokyo, JP (2014)
  • Odawara, JP (2013 - 2018)
  • Kanagawa, JP (2010 - 2023)

Company Filing History:


Years Active: 2010-2025

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Areas of Expertise:
Magnetic Storage Element
Spin Torque Oscillator
Magnetic Memory
Microwave Assisted Recording
Magnetoresistive Effect
Differential Magnetoresistive Head
Magnetic Recording Head
High Frequency Recording
Magnetic Recording Apparatus
Electronic Apparatus
Ferromagnetic Tunnel Junction
Texture-Control Layer
39 patents (USPTO):Explore Patents

Title: Innovative Contributions of Yo Sato in Magnetic Storage Technology

Introduction: Yo Sato, a prolific inventor hailing from Odawara, Japan, has made significant strides in the field of magnetic storage technology. With an impressive portfolio of 38 patents, his work has greatly influenced the development of electronic apparatuses, particularly in enhancing magnetism retention properties while minimizing energy consumption.

Latest Patents: Among his latest patents, the innovative magnetic storage element and electronic apparatus stand out. This magnetic storage element boasts a design that reduces writing current without sacrificing the magnetism retention properties of its storage layer. The unique structure comprises a spin orbit layer, a writing line that is electrically linked to the spin orbit layer, and a tunnel junction element. This element includes a storage layer, an insulator layer, and a magnetization fixed layer stacked in sequence atop the spin orbit layer, complemented by a non-magnetic layer with a thickness of 2 nm or less positioned strategically between the spin orbit layer and the insulator layer.

Another noteworthy patent introduces a magnetic storage element featuring a stacked structure with a fixed layer and a storage layer, along with a non-magnetic layer positioned between them. This design allows for a reversible magnetization direction and maintains a magnetization direction aligned with the stacking structure, utilizing contained elements from a specific group at defined atmospheric concentrations.

Career Highlights: Yo Sato has had a distinguished career with renowned companies such as HGST Netherlands, B.V. and Hitachi, Ltd. Through his innovative work, he has advanced the development of magnetic storage devices and electronic apparatuses, becoming a key figure in the field.

Collaborations: Throughout his career, Sato has collaborated with talented individuals, including his coworkers Keiichi Nagasaka and Masashige Sato. Their combined expertise has contributed to the success of various projects and patents, driving advancements in magnetic storage technology.

Conclusion: Yo Sato’s contributions to magnetic storage technology through his numerous patents reflect his dedication to innovation in the electronic sector. His ability to blend technical expertise with practical applications serves as an inspiration to current and future inventors in the field.

Profile summary based on public USPTO records.
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