The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Dec. 01, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yutaka Higo, Kanagawa, JP;

Masanori Hosomi, Tokyo, JP;

Hiroyuki Ohmori, Kanagawa, JP;

Kazuhiro Bessho, Kanagawa, JP;

Hiroyuki Uchida, Kanagawa, JP;

Yo Sato, Kanagawa, JP;

Naoki Hase, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 5/08 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 5/08 (2013.01); G11C 5/063 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01L 27/226 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

To provide a magnetic memory for storing multi-level information capable of reading while sufficiently securing a read margin. Provided is a magnetic memory including: first and second magnetic storage elements that are provided between a first wiring and a second wiring crossing each other, and are electrically connected in series; a third wiring electrically connected between the first and second magnetic storage elements; a first determination unit that determines a magnetization state of the first magnetic storage element on the basis of a current flowing to the first magnetic storage element through the third wiring; and a second determination unit that determines a magnetization state of the second magnetic storage element on the basis of a current flowing to the first and second magnetic storage elements through the first wiring, in which the determination state of the second determination unit is changed on the basis of the determination result of the first determination unit.


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