The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Dec. 26, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Hiroyuki Ohmori, Kanagawa, JP;

Masanori Hosomi, Tokyo, JP;

Yutaka Higo, Kanagawa, JP;

Hiroyuki Uchida, Kanagawa, JP;

Naoki Hase, Tokyo, JP;

Yo Sato, Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

The present disclosure is to provide a ferromagnetic tunnel junction element and a method of manufacturing the ferromagnetic tunnel junction element capable of avoiding changes in the characteristics of the element and maintaining a high fabrication yield, while avoiding an increase in the area occupied by the element and an increase in the number of manufacturing steps. The ferromagnetic tunnel junction element to be provided includes: a first magnetic layer; a first insulating layer disposed on the first magnetic layer; a second magnetic layer containing a magnetic transition metal, the second magnetic layer being disposed on the first insulating layer; and a magnesium oxide film containing the magnetic transition metal, the magnesium oxide film being disposed to cover the side surfaces of the second magnetic layer.


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