Hgst Netherlands, B.v.

Hitachi, Ltd.

Sony Semiconductor Solutions Corporation

Western Digital Technologies, Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Yo Sato

Keiichi Nagasaka

Masukazu Igarashi

Masashige Sato

Susumu Okamura

Masato Shiimoto

Hiroyuki Uchida

Masanori Hosomi

Hiroyuki Ohmori

Yutaka Higo

Katsumi Hoshino

Naoki Hase

Katsuro Watanabe

Hiroyuki Hoshiya

Masato Matsubara

Kenji Sugiura

Kazuhiro Bessho

Kenichi Meguro

Masato Shimoto

Yoshihiro Shiroishi

Nobuo Yoshida

Mikito Sugiyama

Hiroyuki Katada

Isao Nunokawa

Koji Sakamoto

Koichi Nishioka

Kazuhiko Hosomi

Kikuo Kusukawa

Junichiro Shimizu

Takeshi Nakagawa

Masukaza Igarashi

Keizo Kato

Masao Shiimoto

Katsuya Mitsuoka

Keizou Katou

A storage device according to an aspect of the present disclosure includes a plurality of storage elements (e.g., MTJ element) each including a fixed layer with a fixed magnetization direction, a storage layer with a changeable magnetization direction, and an insulating layer provided between the fixed layer and the storage layer, an underlayer (e.g., lower insulating layer) on which the plurality of storage elements is provided in an array, and a semiconductor substrate having a surface on which the underlayer is laminated. The underlayer has an inclined surface inclined with respect to the surface, and any of the plurality of storage elements is provided on the inclined surface.

Storage device, electronic apparatus, and method of manufacturing storage device

A magnetic storage element and an electronic apparatus having a reduced writing current while retaining a magnetism retention property of a storage layer. The magnetic storage element includes a spin orbit layer extending in one direction, a writing line that is electrically coupled to the spin orbit layer, and allows a current to flow in an extending direction of the spin orbit layer, a tunnel junction element including a storage layer, an insulator layer, and a magnetization fixed layer that are stacked in order on the spin orbit layer, and a non-magnetic layer having a film thickness of 2 nm or less, and disposed at any stack position between the spin orbit layer and the insulator layer.

Magnetic storage element and electronic apparatus

Provided is a magnetic storage element including a stack structure which includes a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is reversible, and a non-magnetic layer sandwiched between the fixed layer and the storage layer. The magnetization direction has a direction along a stack direction of the stack structure, and the fixed layer or the storage layer has a region which contains at least one contained element selected from the element group consisting of B, C, N, Al, Mg, and Si at 30 atm % or more and 80 atm % or less.

Magnetic storage element, magnetic head, magnetic storage device, electronic apparatus, and method for manufacturing magnetic storage element

The present disclosure is to provide a ferromagnetic tunnel junction element and a method of manufacturing the ferromagnetic tunnel junction element capable of avoiding changes in the characteristics of the element and maintaining a high fabrication yield, while avoiding an increase in the area occupied by the element and an increase in the number of manufacturing steps. The ferromagnetic tunnel junction element to be provided includes: a first magnetic layer; a first insulating layer disposed on the first magnetic layer; a second magnetic layer containing a magnetic transition metal, the second magnetic layer being disposed on the first insulating layer; and a magnesium oxide film containing the magnetic transition metal, the magnesium oxide film being disposed to cover the side surfaces of the second magnetic layer.

Ferromagnetic tunnel junction element and method of manufacturing the same

To provide a magnetic memory capable of performing stable recording while suppressing occurrence of an inversion error. Provided is a magnetic memory including a spin orbit layer in which a spin-polarized electron is generated by a current, a magnetic memory element having a laminated structure including a magnetic layer in which a magnetization direction changes according to information to be recorded and an insulating layer, and provided on the spin orbit layer, and a voltage application layer for applying a voltage to the magnetic layer via the insulating layer, in which the voltage application layer applies a voltage to the magnetic layer at a same time as the current flowing in the spin orbit layer to change magnetic anisotropy or a magnetic damping constant of the magnetic layer.

Magnetic memory and magnetic memory recording method

There is provided a magnetic memory that can suppress the increase in manufacturing costs while recording multivalued information in one memory cell, the memory including first and second tunnel junction elements each having a laminated structure including a reference layer with a fixed magnetization direction, a recording layer with a reversible magnetization direction, and an insulating layer sandwiched between the reference layer and the recording layer, a first selection transistor electrically connected to first ends of the first and second tunnel junction elements, a first wire electrically connected to a second end of the first tunnel junction element, and a second wire electrically connected to a second end of the second tunnel junction element.

Magnetic memory, recording method of magnetic memory, and reading method of magnetic memory

To provide a magnetic storage element, a magnetic storage device, and an electronic device which store multi-value information with a simpler structure. A magnetic storage element provided with a plurality of tunnel junction elements each of which includes a reference layer having a fixed magnetization direction, a storage layer capable of reversing a magnetization direction, and an insulator layer interposed between the reference layer and the storage layer, the plurality of tunnel junction elements electrically connected to each other in parallel, in which the plurality of tunnel junction elements has film configurations identical to each other, respective layers of the film configurations formed by using a same material to have a same thickness, and each of cross-sectional shapes obtained by cutting the plurality of tunnel junction elements in a laminating direction is a polygonal shape including upper and lower sides parallel to each other with a ratio of the lower side to the upper side different for each of the plurality of tunnel junction elements.

Magnetic storage element, magnetic storage device, electronic device, and method of manufacturing magnetic storage element

To provide a magnetic memory for storing multi-level information capable of reading while sufficiently securing a read margin. Provided is a magnetic memory including: first and second magnetic storage elements that are provided between a first wiring and a second wiring crossing each other, and are electrically connected in series; a third wiring electrically connected between the first and second magnetic storage elements; a first determination unit that determines a magnetization state of the first magnetic storage element on the basis of a current flowing to the first magnetic storage element through the third wiring; and a second determination unit that determines a magnetization state of the second magnetic storage element on the basis of a current flowing to the first and second magnetic storage elements through the first wiring, in which the determination state of the second determination unit is changed on the basis of the determination result of the first determination unit.

Magnetic memory, semiconductor device, electronic device, and method of reading magnetic memory

A magnetic field-assisted magnetic recording (MAMR) head is provided, which includes a recording main pole, a seed layer, and a spin torque oscillator (STO) positioned over the main pole, in this order, in a stacking direction from a leading side to a trailing side of the recording head. The STO comprises a spin polarized layer (SPL), an interlayer with fcc structure, and a field generating layer (FGL), in this order in the stacking direction. The FGL comprises a low magnetic flux density interface (LMFDI) layer with bcc structure that directly contacts the interlayer.

Low magnetic flux density interface layer for spin torque oscillator

A magnetic field-assisted magnetic recording (MAMR) head is provided, which includes a recording main pole and a texture control layer (TCL), a seed control layer, and a spin torque oscillator (STO) positioned over the main pole, in this order, in a stacking direction from a leading side to a trailing side of the recording head. The STO has a crystallographic preferred growth orientation and includes a spin polarized layer (SPL). The TCL may include a Cu layer.

Texture-control layer for spin torque oscillator

A magnetic write head having a spin torque oscillator with a magnetic field sensor for accurately determining magnetic field oscillation frequency. The spin torque oscillator has one or more tunnel junction (TMR) sensors formed at the side of the spin torque oscillator. The TMR sensor advantageously detects a magnetic field signal that is an additive signal of both fields from the spin polarization layer and the magnetic field generation layer, thereby providing efficient detection of magnetic field and associated oscillation frequency.

Microwave assisted magnetic recording head having spin torque oscillator frequency detection

A magnetic oscillator for use in Microwave Assisted Magnetic Recording (MAMR). The magnetic oscillator can be a spin torque oscillator and includes a magnetic spin polarization layer, a magnetic field generation layer and a non-magnetic intermediate layer sandwiched between the magnetic spin polarization layer and the magnetic field generation layer. The non-magnetic intermediate layer is constructed of a material that provides improved performance, increased lifespan and thermal robustness. The magnetic intermediate layer is constructed of an alloy of Ag and an element X. More preferably the element X can be Sn or Zn.

Spin torque oscillator with high spin torque efficiency and reliability

The embodiments disclosed generally relate to an STO structure for a magnetic head. The STO structure has an FGL having a greater thickness than the SPL. The SPL may have multiple layers. In one embodiment, a MAMR head comprises a main pole; a trailing shield; and an STO coupled between the main pole and the trailing shield. The STO includes: a first magnetic layer having a first thickness; a non-magnetic spacer layer coupled to the first magnetic layer; and a second magnetic layer having a second thickness and coupled to the non-magnetic spacer layer, wherein the first thickness is greater than the second thickness, wherein a current is charged from the first magnetic layer to the second magnetic layer, and wherein a vertical magnetic anisotropy field of the second magnetic film is less than 0 kOe.

AF-mode STO with negative Hk spin polarization layer

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Odawara, Japan

Yo Sato