Ying-Tsang Ho

Title: Innovations by Ying-Tsang Ho in Semiconductor Technology

Introduction

Ying-Tsang Ho is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of diode design and manufacturing. With a total of three patents to his name, Ho's work has had a notable impact on the industry.

Latest Patents

One of Ying-Tsang Ho's latest patents focuses on surface damage control in diodes. This patent describes a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region adjacent to the first well region, and an array of well regions within the first well region. The first well region contains a first type of dopants, while the second well region contains a different type of dopants. The array of well regions also includes the second type of dopants. Additionally, the semiconductor device features a metal silicide layer on the array of well regions, a metal silicide nitride layer on the metal silicide layer, and a contact structure on the metal silicide nitride layer.

Career Highlights

Ying-Tsang Ho is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise in semiconductor devices has positioned him as a key player in the development of innovative technologies.

Collaborations

Throughout his career, Ho has collaborated with notable colleagues, including Ting-Ying Wu and Yung-Hsiang Chen. These collaborations have further enhanced his contributions to the field of semiconductor technology.

Conclusion

Ying-Tsang Ho's work in semiconductor technology, particularly in diode design, showcases his innovative spirit and dedication to advancing the industry. His patents reflect a commitment to improving device performance and reliability.