The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Jul. 22, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chieh-Shuo Liang, Kaohsiung, TW;
Chih-Ho Tai, Tainan, TW;
Ching-Hung Huang, Erlin Township, TW;
Ying-Tsang Ho, Tainan, TW;
Po-Jung Chiang, Zhongli, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A metal-insulator-metal (MIM) capacitor structure and method for forming MIM capacitor structure are provided. The MIM capacitor structure includes a substrate and a metal-insulator-metal (MIM) capacitor formed on the substrate. The MIM capacitor includes a capacitor top metal (CTM) layer, a capacitor bottom metal (CBM) layer and an insulator formed between the CTM layer and the CBM layer. The insulator includes an insulating layer and a first high-k dielectric layer, and the insulating layer includes a nitride layer and an oxide layer, and the nitride layer is formed between the first high-k dielectric layer and the oxide layer.