Taiwan Semiconductor Manufacturing Comp. Ltd.

Ying-Tsang Ho

Yung-Hsiang Chen

Yu-Lung Yeh

Yen-Hsiu Chen

Wei-Liang Chen

Ting-Ying Wu

Ching-Hung Huang

Chih-Ho Tai

Chieh-Shuo Liang

Po-Jung Chiang

A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Surface damage control in diodes

A metal-insulator-metal (MIM) capacitor structure and method for forming MIM capacitor structure are provided. The MIM capacitor structure includes a substrate and a metal-insulator-metal (MIM) capacitor formed on the substrate. The MIM capacitor includes a capacitor top metal (CTM) layer, a capacitor bottom metal (CBM) layer and an insulator formed between the CTM layer and the CBM layer. The insulator includes an insulating layer and a first high-k dielectric layer, and the insulating layer includes a nitride layer and an oxide layer, and the nitride layer is formed between the first high-k dielectric layer and the oxide layer.

Metal-insulator-metal (MIM) capacitor structure and method for forming the same

Growing community of inventors

Tainan, Taiwan

Ying-Tsang Ho