Singapore, Singapore

Yi Tat Lim


Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 11(Granted Patents)


Location History:

  • Singapore, SG (2015 - 2016)
  • Perak, MY (2018)

Company Filing History:


Years Active: 2015-2018

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4 patents (USPTO):

Title: Yi Tat Lim: Innovator in Integrated Circuit Technology

Introduction

Yi Tat Lim is a prominent inventor based in Singapore, known for his contributions to the field of integrated circuits. With a total of 4 patents to his name, Lim has made significant advancements in the methods of forming integrated circuits and determining gate dielectric layer electrical thickness.

Latest Patents

Lim's latest patents focus on integrated circuits and methods for their fabrication. One of his notable inventions includes a design for integrated circuits that features a semiconductor substrate with an active region and an STI structure. This design incorporates a first gate electrode structure that includes a gate dielectric layer and a gate electrode layer. Additionally, he has developed methods for fabricating integrated circuits with high-voltage MOSFETs, which involve intricate processes of layering silicon materials and capping layers to enhance performance.

Career Highlights

Lim is currently employed at Globalfoundries Singapore Pte. Ltd., where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the technology behind integrated circuits, making them more efficient and reliable.

Collaborations

Throughout his career, Lim has collaborated with notable colleagues, including Sung Mun Jung and Bing Xuan Li. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Yi Tat Lim's contributions to integrated circuit technology exemplify the spirit of innovation in the semiconductor industry. His patents and ongoing work at Globalfoundries Singapore Pte. Ltd. continue to shape the future of electronic devices.

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