Yi-Lung Tsai is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His innovative work focuses on enhancing the performance and reliability of Schottky diodes.

Latest Patents

One of his latest patents is the Multi-trench Schottky diode. This invention includes a semiconductor base layer, a back metal layer, an epitaxial layer, an interlayer dielectric layer, a first metal layer, a passivation layer, and a second metal layer. The epitaxial layer on the semiconductor base layer features a termination trench structure, a first trench structure, a second trench structure, and a third trench structure. The dielectric layer is positioned on the epitaxial layer in a termination area. The first metal layer, which is stacked on the termination trench structure and the interlayer dielectric layer, extends between the second trench structure and the third trench structure. The passivation layer is placed on the first metal layer and the interlayer dielectric layer. The second metal layer, located on the first metal layer and the passivation layer, extends to the first trench structure. This design allows for the dispersion of the electric field, thereby preventing voltage breakdown through the trench structures in the termination area.

Another notable patent is the Schottky diode with multiple guard ring structures. This invention comprises a semiconductor base layer, a back metal layer, an epitaxial layer, a dielectric layer, a first metal layer, a passivation layer, and a second metal layer. The epitaxial layer on the semiconductor base layer includes a terminal trench structure, a first ion implantation guard ring, a second ion implantation guard ring, and a third ion implantation guard ring. The dielectric layer is situated on the epitaxial layer in a termination area. The first metal layer is positioned on the terminal trench structure and the dielectric layer. The passivation layer is on the first metal layer and the dielectric layer. The second metal layer is on the first metal layer and the passivation layer. The widths of the first, second, and third ion implantation guard rings decrease sequentially, allowing for a step-by-step distribution of voltage.

Career Highlights

Yi-Lung Tsai is currently employed at Taiwan Semiconductor Manufacturing Company Ltd. His work has significantly impacted the

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