Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Lung Tsai

Aryadeep Mrinal

Po-Wen Yang

Mohammad Amanullah

Shu-Siang Liang

Yao-Wei Chuang

Syed Sarwar Imam

Ming-Lou Tung

A multi-trench schottky diode includes a semiconductor base layer, a back metal layer, an epitaxial layer, an interlayer dielectric layer, a first metal layer, a passivation layer and a second metal layer. The epitaxial layer on the semiconductor base layer includes a termination trench structure, a first trench structure, a second trench structure and a third trench structure. The dielectric layer is on the epitaxial layer in a termination area. The first metal layer stacked on the termination trench structure and the interlayer dielectric layer extends between the second trench structure and the third trench structure. The passivation layer is on the first metal layer and the interlayer dielectric layer. The second metal layer on the first metal layer and the passivation layer extends to the first trench structure. Thus, the electric field is dispersed and the voltage breakdown can be avoided with the trench structures in the termination area.

Multi-trench Schottky diode

A Schottky diode with multiple guard ring structures includes a semiconductor base layer, a back metal layer, an epitaxial layer, a dielectric layer, a first metal layer, a passivation layer and a second metal layer. The epitaxial layer on the semiconductor base layer includes a terminal trench structure, a first ion implantation guard ring, a second ion implantation guard ring and a third ion implantation guard ring. The dielectric layer is on the epitaxial layer in a termination area. The first metal layer is on the terminal trench structure and the dielectric layer. The passivation layer is on the first metal layer and the dielectric layer. The second metal layer is on the first metal layer and the passivation layer. Widths of the first, second and third ion implantation guard rings decrease in order, so that the voltage can be distributed step by step.

Schottky diode with multiple guard ring structures

A field effect transistor includes a substrate, an epitaxial layer, a remnant-oxide layer, an electrode, a surrounding-oxide layer, a surrounding-nitride layer, a gate oxide layer, a gate, a P-body region, a source region, an interlayer dielectric and a source electrode. The epitaxial layer on the substrate has a trench having a sidewall and a bottom. The electrode inside the trench is coated subsequently by the surrounding-oxide layer, the surrounding-nitride layer and the remnant-oxide layer. The gate formed on the gate oxide layer is separated from the electrode sequentially by the gate oxide layer, the surrounding-nitride layer and the surrounding-oxide layer. The P-body region and the source region, formed at the epitaxial layer, are separated from the gate by the gate oxide layer. The interlayer dielectric covers the source region and the gate. The source electrode covers the P-body region and the interlayer dielectric, and contacts the source region.

Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for manufacturing the same

A field effect transistor is manufactured by firstly forming an epitaxial layer on a substrate. Then, a trench having an oxide layer is formed on the epitaxial layer. The oxide layer has a first electrode portion having a first width and a first height and a second electrode portion having a second width and a second height. A gate oxide layer covering the oxide layer and the second electrode portion has a gate portion having a third width. The epitaxial layer has a body region and a source region, where these two regions are adjacent to the gate portion and covered by an interlayer dielectric. A source electrode covering the body region and the interlayer dielectric contacts the source region. The first height is no less than the second height, the first width is smaller than the second width, and the second width is smaller than the third width.

Field effect transistor having a multi-width electrode structure and method for manufacturing the same

A method for manufacturing a field effect transistor having a widened trench forms sequentially an epitaxial layer, a trench, an oxidation layer, a trench-oxidation layer, a polysilicon layer, a residual oxidation layer, an electrode portion, a lower trench, a widened trench, a gate portion, a body region, a source region, an interlayer dielectric layer and a source electrode. The trench is formed at the epitaxial layer. The oxidation layer, the trench-oxidation layer and a polysilicon layer are then formed. The residual oxidation layer and the electrode portion are formed in the trench by etching the polysilicon layer and the trench-oxidation layer. The lower trench is formed by etching the epitaxial layer. The widened trench is formed by widening a portion of the trench away from a trench bottom so as to have the electrode portion and the residual oxidation layer disposed at the lower trench.

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Taipei, Taiwan

Yi-Lung Tsai