The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Jul. 22, 2020
Taiwan Semiconductor Co., Ltd., New Taipei, TW;
Yi-Lung Tsai, New Taipei, TW;
Syed Sarwar Imam, New Taipei, TW;
Yao-Wei Chuang, New Taipei, TW;
Ming-Lou Tung, New Taipei, TW;
TAIWAN SEMICONDUCTOR CO., LTD., New Taipei, TW;
Abstract
A Schottky diode with multiple guard ring structures includes a semiconductor base layer, a back metal layer, an epitaxial layer, a dielectric layer, a first metal layer, a passivation layer and a second metal layer. The epitaxial layer on the semiconductor base layer includes a terminal trench structure, a first ion implantation guard ring, a second ion implantation guard ring and a third ion implantation guard ring. The dielectric layer is on the epitaxial layer in a termination area. The first metal layer is on the terminal trench structure and the dielectric layer. The passivation layer is on the first metal layer and the dielectric layer. The second metal layer is on the first metal layer and the passivation layer. Widths of the first, second and third ion implantation guard rings decrease in order, so that the voltage can be distributed step by step.