Taipei, Taiwan

Syed Sarwar Imam


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2022

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2 patents (USPTO):Explore Patents

Title: Innovations by Syed Sarwar Imam in Semiconductor Technology

Introduction

Syed Sarwar Imam is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patents. With a total of 2 patents, Imam's work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents is the "Multi-trench Schottky diode." This invention includes a semiconductor base layer, a back metal layer, an epitaxial layer, an interlayer dielectric layer, a first metal layer, a passivation layer, and a second metal layer. The epitaxial layer on the semiconductor base layer features a termination trench structure, along with first, second, and third trench structures. The dielectric layer is positioned on the epitaxial layer in a termination area. The first metal layer, which is stacked on the termination trench structure and the interlayer dielectric layer, extends between the second and third trench structures. The passivation layer is placed on the first metal layer and the interlayer dielectric layer. The second metal layer, located on the first metal layer and the passivation layer, extends to the first trench structure. This design effectively disperses the electric field, thereby preventing voltage breakdown in the termination area.

Another significant patent is the "Schottky diode with multiple guard ring structures." This invention also comprises a semiconductor base layer, a back metal layer, an epitaxial layer, a dielectric layer, a first metal layer, a passivation layer, and a second metal layer. The epitaxial layer includes a terminal trench structure and three ion implantation guard rings. The dielectric layer is situated on the epitaxial layer in a termination area. The first metal layer is positioned on the terminal trench structure and the dielectric layer, while the passivation layer is on the first metal layer and the dielectric layer. The second metal layer is placed on the first metal layer and the passivation layer. The widths of the ion implantation guard rings decrease sequentially, allowing for a step-by-step distribution of voltage.

Career Highlights

Syed Sarwar Imam is currently employed at Taiwan Semiconductor Manufacturing Company Ltd. His work at this leading semiconductor manufacturer has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in semiconductor technology.

Collaborations

Imam has collaborated with

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