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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9741825 B1

PDFFull Text
Date of Patent:
Aug. 22, 2017

Filed:

Dec. 08, 2016

Method for manufacturing field effect transistor having widened trench

Applicant:

Taiwan Semiconductor Co., Ltd., New Taipei, TW;

Inventors:

Yi-Lung Tsai, New Taipei, TW;

Aryadeep Mrinal, New Taipei, TW;

Mohammad Amanullah, New Taipei, TW;

Po-Wen Yang, New Taipei, TW;

Shu-Siang Liang, New Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR CO., LTD., New Taipei, TW;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 21/02274 (2013.01); H01L 21/28035 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 29/401 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/7827 (2013.01);
Abstract

A method for manufacturing a field effect transistor having a widened trench forms sequentially an epitaxial layer, a trench, an oxidation layer, a trench-oxidation layer, a polysilicon layer, a residual oxidation layer, an electrode portion, a lower trench, a widened trench, a gate portion, a body region, a source region, an interlayer dielectric layer and a source electrode. The trench is formed at the epitaxial layer. The oxidation layer, the trench-oxidation layer and a polysilicon layer are then formed. The residual oxidation layer and the electrode portion are formed in the trench by etching the polysilicon layer and the trench-oxidation layer. The lower trench is formed by etching the epitaxial layer. The widened trench is formed by widening a portion of the trench away from a trench bottom so as to have the electrode portion and the residual oxidation layer disposed at the lower trench.

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