Hsinchu, Taiwan

Yi-Hsuan Chung


Average Co-Inventor Count = 5.6

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Hsinchu, TW (2017 - 2024)
  • Kaohsiung, TW (2020 - 2024)

Company Filing History:


Years Active: 2017-2024

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6 patents (USPTO):Explore Patents

Title: Yi-Hsuan Chung: Innovator in Semiconductor Technology

Introduction

Yi-Hsuan Chung is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on innovative semiconductor devices and methods for their fabrication.

Latest Patents

Among his latest patents is a semiconductor device and a method for fabricating the same. This invention includes a dummy fin structure disposed over a substrate, a dummy gate structure over a part of the dummy fin structure, and a resistor wire formed of a conductive material embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view. Another notable patent is the structure and formation method of a semiconductor device with fin structures. This method involves forming a first and second semiconductor fin over a semiconductor substrate, with the second fin being wider than the first. The method also includes forming a gate stack that extends across both fins and establishing p-type and n-type doped source/drain structures on each fin.

Career Highlights

Yi-Hsuan Chung is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to advance semiconductor technology. His innovative approaches have positioned him as a key figure in the industry.

Collaborations

He has collaborated with notable coworkers, including Po-Nien Chen and Chia-Hsin Hu, contributing to various projects that enhance semiconductor design and functionality.

Conclusion

Yi-Hsuan Chung's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to shape the future of semiconductor devices.

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