Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Hsuan Chung

Po-Nien Chen

Chung-Chieh Yang

Chia-Hsin Hu

Chung-Peng Hsieh

Yu-Chiun Lin

Chih-Yung Lin

Bo-Shiuan Shie

Hsing-Hui Hsu

A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Semiconductor device and a method for fabricating the same

A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.

Structure and formation method of semiconductor device with fin structures

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Hsinchu, Taiwan

Yi-Hsuan Chung