The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Nov. 16, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Hsin Hu, Changhua County, TW;

Yu-Chiun Lin, Taipei, TW;

Yi-Hsuan Chung, Kaohsiung, TW;

Chung-Peng Hsieh, New Taipei, TW;

Chung-Chieh Yang, Zhubei, TW;

Po-Nien Chen, Miaoli, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 49/02 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01L 28/00 (2013.01); H01L 28/24 (2013.01); H10B 43/27 (2023.02);
Abstract

A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.


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