Tainan, Taiwan

Yeh-Sheng Lin


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Yeh-Sheng Lin: Innovator in Semiconductor Technology

Introduction

Yeh-Sheng Lin is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods in gate structure fabrication. His work has implications for the efficiency and performance of electronic devices.

Latest Patents

Yeh-Sheng Lin holds a patent for a method of removing step height on gate structures. This patent outlines a process that begins with providing a substrate on which a gate structure is disposed. A dielectric layer covers both the gate structure and the substrate. Subsequently, a composite material layer is formed over the dielectric layer. The method involves removing part of the composite material layer to create a step height directly on the gate structure. A wet etching process is then performed to eliminate the step height, followed by etching the dielectric layer to form a first contact hole that exposes the gate structure. This innovative approach enhances the manufacturing process of semiconductor devices.

Career Highlights

Yeh-Sheng Lin is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to contribute to advancements in semiconductor technology and improve manufacturing processes.

Collaborations

Yeh-Sheng Lin has collaborated with notable colleagues, including Chang-Mao Wang and Chun-Chi Yu. These collaborations have fostered a productive environment for innovation and development in their field.

Conclusion

Yeh-Sheng Lin's contributions to semiconductor technology through his patent and work at United Microelectronics Corporation highlight his role as an influential inventor. His innovative methods continue to shape the future of electronic device manufacturing.

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