United Microelectronics Corp.

Yeh-Sheng Lin

Chung-Yi Chiu

Chun-Chi Yu

Chang-Mao Wang

A method of removing a step height on a gate structure includes providing a substrate. A gate structure is disposed on the substrate. A dielectric layer covers the gate structure and the substrate. Then, a composite material layer is formed to cover the dielectric layer. Later, part of the composite material layer is removed to form a step height disposed directly on the gate structure. Subsequently, a wet etching is performed to remove the step height. After the step height is removed, the dielectric layer is etched to form a first contact hole to expose the gate structure.

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Tainan, Taiwan

Yeh-Sheng Lin