The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jul. 04, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Yeh-Sheng Lin, Tainan, TW;
Chang-Mao Wang, Tainan, TW;
Chun-Chi Yu, Taipei, TW;
Chung-Yi Chiu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of removing a step height on a gate structure includes providing a substrate. A gate structure is disposed on the substrate. A dielectric layer covers the gate structure and the substrate. Then, a composite material layer is formed to cover the dielectric layer. Later, part of the composite material layer is removed to form a step height disposed directly on the gate structure. Subsequently, a wet etching is performed to remove the step height. After the step height is removed, the dielectric layer is etched to form a first contact hole to expose the gate structure.