For the Inventor, By the Inventor

Enter inventor name

Yasushi Haga

This inventor holds 4 USPTO granted patents. Top assignee: Seiko Epson Corporation. Active years: 2003-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasushi Haga. Retrieved from https://idiyas.com/inventor/yasushi-haga

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 8(Granted Patents)

Location History:

Tokyo, JP (2004)
Sakata, JP (2003 - 2005)

Company Filing History:

4 out of 34,238

Seiko Epson Corporation

Years Active: 2003-2005

Loading Chart...

4 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6916714 - METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A HIGH-BREAKDOWN-VOLTAGE MOS TRANSISTOR AND A LOW-BREAKDOWN-VOLTAGE MOS TRANSISTOR ARE FORMED ON AN IDENTICAL SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY (2005-07-12),

2. 6780701 - Method for manufacturing high-breakdown voltage transistor and low-breakdown voltage transistor on the same substrate (2004-08-24),

3. 6720222 - Method of manufacturing semiconductor device (2004-04-13),

4. 6638804 - Method of manufacturing semiconductor device with high and low breakdown transistors (2003-10-28),

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

Loading…