Yokohama, Japan

Yasumichi Suzuki

This inventor holds 59 USPTO granted patents, primarily in Semiconductor Devices (CPC class 3584). Top assignees: Canon Kabushiki Kaisha, Renesas Technology Corp., Hitachi, Ltd.. Active years: 1986-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasumichi Suzuki. Retrieved from https://idiyas.com/inventor/yasumichi-suzuki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 91.5

Average Co-Inventor Count = 4.1

ph-index = 18

Forward Citations = 1,053(Granted Patents)

Forward Citations (Not Self Cited) = 1,007(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hara, JP (1992)
  • Yamayoshibiru, JP (1992)
  • Haramachi, JP (1997)
  • Tokyo, JP (1986 - 2004)
  • Kodaira, JP (2005)
  • Kanagawa-ken, JP (2006)
  • Hitachinaka, JP (2007 - 2009)
  • Yokohama, JP (1986 - 2011)

Company Filing History:


Years Active: 1986-2011

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Areas of Expertise:
Semiconductor Device
Integrated Circuit
Image Processing
Color Image Processing
Columnar Laminate
Shading Correction
Data Encryption
Mosaic Processing
Color Conversion
Preview Image Data
Thermal Management
A/D Conversion
59 patents (USPTO):Explore Patents

Title: Innovations in Semiconductor Technology: The Contributions of Yasumichi Suzuki

Introduction

Yasumichi Suzuki, a prominent inventor located in Yokohama, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 59 patents, his work focuses on innovations that enhance the performance and reliability of semiconductor devices.

Latest Patents

Among his latest innovations, Suzuki has developed a groundbreaking semiconductor device that utilizes etch-stop films or copper-diffusion barrier films in insulation films constituting conductor layers of a stacked structure. This invention features films with a smaller dielectric constant than traditional silicon nitride films. The insulation film in the lower-layer part of the stacked structure is designed to have a lower dielectric constant than that in the upper-layer part. Notably, this insulation film is a silicon oxide (SiO) film embedded with nano-pores ranging from 0.05 nm to 4 nm in diameter. This inventive approach dramatically reduces the effective dielectric constant while maintaining the mechanical strength of the conductor layers, leading to a highly reliable and high-performance semiconductor device that mitigates wiring delay in signal transmission.

Career Highlights

Suzuki's career includes significant tenures at renowned companies, such as Canon and Renesas Technology Corporation. His tenure at these organizations not only honed his skills in semiconductor technology but also allowed him to contribute valuable innovations that have been pivotal to the advancement of the industry.

Collaborations

Throughout his career, Yasumichi Suzuki has collaborated with esteemed colleagues, including Mitsuru Kurita and Yoshinori Ikeda. These partnerships have fostered a collaborative environment that has led to the development of advanced technological solutions in semiconductor devices.

Conclusion

In summary, Yasumichi Suzuki's extensive portfolio of patents and his contributions to semiconductor technology underscore his role as a leading inventor in the field. His innovative designs and collaborative efforts continue to pave the way for advancements that enhance the performance and efficiency of semiconductor devices, marking him as a noteworthy figure in technological innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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