The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Jun. 25, 2001
Miharu Otani, Yokohama, JP;
Jun Tanaka, Yokohama, JP;
Katsuhiko Hotta, Kodaira, JP;
Yasumichi Suzuki, Kodaira, JP;
Takashi Inoue, Yokohama, JP;
Miharu Otani, Yokohama, JP;
Jun Tanaka, Yokohama, JP;
Katsuhiko Hotta, Kodaira, JP;
Yasumichi Suzuki, Kodaira, JP;
Takashi Inoue, Yokohama, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device capable of high speed operation with a substantially small interlayer capacitance is produced by steps of using an insulating film comprising an organic insulating film and an insulating film composed of an organometallic polymer material as an interlayer insulating film formed by coating, patterning the insulating film in a semi-thermosetting state, etching the organic insulating film as the lower layer by means of the organometallic polymer as a mask, using a plasma gas containing oxygen as the main component, and then conducting ultimate baking treatment of these insulating films.